MDL-XN-5810-DFB 5810 nm Infrared DFB QCL Diode Laser

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Description: Infrared DFB QCL diode laser at 5.81 µm featuring ultra compact design, single-frequency narrow linewidth operation, long lifetime, cost-effectiveness and easy operation.

Applications: measurement, communication, spectrum analysis, etc.

Model #: MDL-XN-5810-DFB

Central Wavelength (µm)	5.81±0.1
Spectral Line Width (MHz)	<50
Side-Mode Suppression Ratio (dB)	>25
Operating Mode	CW
Output Power (mW)	1-15
Power Stability (rms, 4 hours ± 3°C)	<3%, <2%, <1%
Transverse Mode	Near TEM00
Beam Diameter at the Aperture (mm)	<3.0
Beam Divergence, Full Angle (mrad)	<5.0
Warm-up Time (minutes)	<10
Cooled Method	Air cooled
Beam Height from Base Plate (mm)	68.4
Operating Temperature (°C)	10-35
Power Supply (100-240 VAC)	PSU-H-LED
Modulation Option	DC-1 kHz; TTL and Analog optional
Expected Lifetime (hours)	>10000

Please refer to the Data Sheet for detailed specifications

If you need a different model number, please feel free to ask for a quotation.

Long lifetime
FDA registered
ISO and CE qualified
ROHS complied
Model # MDL-XN-5810-DFB

5810 nm

MDL-XN-5810-DFB 5810 nm Infrared DFB QCL Diode Laser

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