Nd:YVO4 Laser Crystal
Nd:YVO4 Laser Crystal
Nd:YVO4 offers clear advantages over Nd:YAG: about five times greater absorption efficiency across a wide pumping band around 808 nm, so the pump wavelength is far less critical; up to three times the stimulated emission cross-section at 1064 nm; a lower lasing threshold and higher slope efficiency; and, being a uniaxial crystal with large birefringence, emission that is linearly polarised. HJ Optronics supplies doping concentrations from 0.1 to 3%, crystals up to 20 mm diameter by 40 mm, and volume production of Nd:YVO4 devices from 3 x 3 x 0.5 mm3 to 4 x 4 x 30 mm3.
Key Features
- About 5x the absorption efficiency of Nd:YAG around 808 nm
- Up to 3x the stimulated emission cross-section at 1064 nm
- Lower lasing threshold and higher slope efficiency
- Linearly polarised output (uniaxial, large birefringence)
- Doping 0.1-3%, tolerance +/-0.05% below 1 at%
- Crystals up to 20 mm diameter x 40 mm
- High-volume supply of small devices
Specifications
| Parameter | Specifications |
|---|---|
| Dimension Tolerance | (W ± 0.1 mm) × (H ± 0.1 mm) × (L + 0.5/-0.1 mm) × (L≧2.5 mm)(W ± 0.1 mm) × (H ± 0. 1 mm) × (L + 0.1/-0.1 mm) × (L＜ 2.5mm) |
| Clear Aperture | Central 90% of the diameter |
| Surface Quality | 10/5 to MIL-PRF-13830B |
| Flatness | ≦λ/8 @633 nm (L≧2.5 mm) ≦λ/4 @633 nm (L<2.5 mm) |
| Transmitted Wavefront Distortion | ≦λ/4 @633 nm |
| Parallelism | 20 arc sec |
| Perpendicularity | ≦15 arc min |
| Angle Tolerance | ≦± 0.5° |
| Chamfer | ≦0.2 mm × 45° |
| Chip | ≦0.1 mm |
| Damage Threshold | ＞1 GW/cm2 @1064 nm, 10 ns, 10 Hz (AR-coated) |
| Warranty Period | One year under proper use. |
Data Sheet: Nd:YVO4 Laser Crystal (PDF)
Dimensions, doping levels and coatings are made to order - send us your specification for a quotation.
