SESAM (Semiconductor Saturable Absorber Mirror)
SESAM (Semiconductor Saturable Absorber Mirror)
SESAM (semiconductor saturable absorber mirror) mode-locked ultrafast pulsed lasers represent an important breakthrough in the development of mode-locked lasers; a key challenge has been extending the technology to the mid-infrared. This design is based on an InAs/GaSb superlattice SESAM, which achieves over 99 % reflectivity and 10 - 15 % modulation depth with 1.4 ps to 720 ps relaxation-time flexibility over 2800 - 5000 nm, giving stable phase mode locking. Its ultra-wide operating bandwidth and flexible parameter design suit fluoride fibre lasers, crystal lasers and mid-infrared semiconductor lasers in the 3 - 5 µm band.
Key Features
- Reflectivity over 99 %
- Modulation depth 10 - 15 %
- Relaxation time 1.4 ps to 720 ps, selectable
- Operating range 2800 - 5000 nm
- InAs/GaSb superlattice design for the mid-infrared
- Higher damage threshold
- Stable phase mode locking for 3 - 5 µm ultrafast fibre lasers
Specifications
| Parameter | Specifications |
|---|---|
| Reflectivity | > 99 % |
| Modulation Depth | 10 - 15 % |
| Relaxation Time | 1.4 ps to 720 ps |
| Operating Wavelength Range | 2800 - 5000 nm |
| Device Structure | InAs/GaSb Type-II superlattice |
| Absorptivity | 38 - 40 % |
| Saturation Fluence | 40 - 70 µJ/cm² |
Standard models
| Model type | SAM-2800-40-680ps-c/e | SAM-3500-38-720ps-c/e | SAM-3500-38-7ps-c/e | SAM-3500-38-1.4ps-c/e |
|---|---|---|---|---|
| Central Wavelength | 2800 nm | 3500 nm | 3500 nm | 3500 nm |
| Absorptivity | 40 % | 38 % | 38 % | 38 % |
| Modulation Depth | 15 % | 11.5 % | 14 % | 11.5 % |
| Relaxation Time | 680 ps | 720 ps | 7 ps | 1.4 ps |
| Saturation Fluence | 70 µJ/cm² | 70 µJ/cm² | 50 µJ/cm² | 40 µJ/cm² |
Data Sheet: SESAM (PDF)
Tell us your wavelength, modulation depth and relaxation time and we will quote the right SESAM.
